• DocumentCode
    3233605
  • Title

    Efficient Density Gradient Quantum Corrections for 3D Monte Carlo Simulations

  • Author

    Riddet, C. ; Brown, A.R. ; Alexander, C. ; Millar, C. ; Roy, S. ; Asenov, A.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ.
  • fYear
    2006
  • fDate
    6-8 Sept. 2006
  • Firstpage
    200
  • Lastpage
    203
  • Abstract
    An efficient method for including quantum corrections in 3D ensemble Monte Carlo simulations based on the density gradient formalism is presented. The method is used to study the impact of transport on the current variations introduced by the random body thickness pattern in ultra thin body SOI MOSFETs. The resulting increased variability in drive current is studied in comparison between Monte Carlo and drift diffusion simulations
  • Keywords
    MOSFET; Monte Carlo methods; gradient methods; 3D ensemble Monte Carlo simulations; density gradient quantum correction; drift diffusion simulations; ultra thin body SOI MOSFET; Computational modeling; Distributed computing; Fluctuations; MOSFETs; Monte Carlo methods; Nanoscale devices; Potential well; Predictive models; Quantum mechanics; Schrodinger equation; Monte Carlo; SOI; UTB MOSFETs; body thickness fluctuations; double gate; quantum corrections;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2006 International Conference on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0404-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2006.282871
  • Filename
    4061614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3233605