Title :
Extension of high fT operation bias range for an AlInAs/InGaAs HBT
Author :
Tanaka, S. ; Furukawa, A. ; Baba, T. ; Madihian, M. ; Mizuta, M. ; Honjo, K.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-fT operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an fT- VCE characteristic with a broad peak at around 2.2 V (VBE=1.0 V). It was found that the electron transit time tB+tC is insensitive to external voltages. A realistic flat fT-V CE characteristic can be obtained by reducing extrinsic delay time
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; AlInAs-InGaAs; HBT; III-V semiconductors; base-collector structure; collector bias voltage variation; digital circuits; electron transit time; fabrication; heterojunction bipolar transistors; high fT operation bias range; high-speed switching performance; transit frequency; Delay effects; Digital circuits; Electrons; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Logic circuits; Logic devices; Switching circuits; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79833
