DocumentCode
3233647
Title
The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs
Author
Pourfath, M. ; Kosina, H. ; Cheong, B.H. ; Park, W.J. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., TU Wien
fYear
2006
fDate
6-8 Sept. 2006
Firstpage
208
Lastpage
211
Abstract
The non-equilibrium Green´s function formalism is employed to perform a comprehensive numerical study of carbon nanotube field-effect transistors. Due to numerous possible configurations of CNTs many different material parameters exists. The static and dynamic response of transistors is studied for a wide range of electron-phonon interaction parameters
Keywords
Green´s function methods; carbon nanotubes; electron-phonon interactions; field effect transistors; nanotube devices; CNTFET; carbon nanotube field-effect transistors; dynamic response; electron-phonon interaction effect; material parameters; nonequilibrium Green´s function; static response; Carbon nanotubes; Charge carrier processes; Equations; FETs; Green´s function methods; Materials science and technology; Microelectronics; Potential well; Scattering; Semiconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0404-5
Type
conf
DOI
10.1109/SISPAD.2006.282873
Filename
4061616
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