Title :
Impact of Wafer and Technology Selection on Liner Stress Mobility Enhancement
Author :
Mochizuki, M. ; Fukuda, K.
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo
Abstract :
For the first time, the drain current enhancement effect of stressed contact liner applied to various wafer material is discussed in this paper. The enhancement is larger in SOI and SOQ device than in bulk MOSFET. Thinner SOI film causes more enhancement, but saturation current fluctuation sensitive to SOI thickness variation increases drastically. In case of SOS wafer, enhancement is reduced as SOS film thickness becomes thinner, because of large elastic modulus of sapphire
Keywords :
sapphire; silicon-on-insulator; stress effects; thin film devices; SOI; SOQ device; SOS; drain current; elastic modulus; mobility enhancement; saturation current fluctuation; silicon on insulator; silicon on sapphire; stressed contact liner; wafer material; Boundary conditions; Fluctuations; MOSFET circuits; Monitoring; Moore´s Law; Oxidation; Paper technology; Silicon compounds; Stress; Substrates;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282876
