Measurements and simulations of excess carrier distributions in 3.3 kV IGBTs during static conditions and turn-on

Author

Tornblad, O. ; Breitholtz, B. ; Ostling, M.

Author_Institution

Dept. of Electron., KTH-Electrum, Kista, Sweden

fYear

1997

fDate

26-29 May 1997

Firstpage

81

Lastpage

84

Abstract

A careful sample preparation technique and optical alignment allowed depth- and time-resolved free carrier absorption measurements of excess carrier distributions in the n-base of 3.3 kV Si IGBTs. Measurements were performed under static equilibrium and turn-on for current densities in the range 10-50 A/cm² for temperatures in the interval 35-150 °C. The correspondence with numerical simulation results was qualitatively good, but with relatively large quantitative discrepancies

Keywords

carrier density; carrier lifetime; insulated gate bipolar transistors; semiconductor device models; 3.3 kV; 35 to 150 C; IGBTs; Si; current densities; depth-resolved free carrier absorption; excess carrier distributions; n-base; numerical simulation; optical alignment; sample preparation technique; static equilibrium; time-resolved free carrier absorption; turn-on; Anodes; Cathodes; Computational modeling; Current density; Insulated gate bipolar transistors; Numerical simulation; Predictive models; Space vector pulse width modulation; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601437

Filename

601437