Title :
Modeling of Cross-Talk Effects in Floating-Gate Devices Using TCAD Simulations
Author :
Saad, Yv. ; Ciappa, M. ; Pfaffli, P. ; Bomholt, L. ; Fichtner, W.
Author_Institution :
Synopsys Switzerland LLC, Zurich
Abstract :
Technology CAD (TCAD) modeling is used to develop, analyze, and optimize flash memory devices under all operating conditions, taking into account three-dimensional effects such as cross-talk between the cells. A methodology for structure generation, meshing, device simulation, and characterization of flash memory devices is proposed. The results demonstrate the effectiveness of full 3D simulation models for flash memory cells, which capture the geometrical, physical, and electrostatic effects
Keywords :
crosstalk; flash memories; mesh generation; semiconductor device models; technology CAD (electronics); TCAD; cross-talk effects; device simulation; electrostatic effects; flash memory device; floating-gate device; meshing; structure generation; technology CAD modeling; three-dimensional effects; Analytical models; Character generation; Electronic mail; Electrostatics; Flash memory; Flash memory cells; Laboratories; Nonvolatile memory; Predictive models; Solid modeling; TCAD simulations; component; cross-talk; flash memories;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282877
