On the analysis of random doping induced fluctuations in ultra small semiconductor devices by linearization

Author

Andrei, P.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida State Univ., Tallahassee, FL

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

256

Lastpage

259

Abstract

The basic assumptions used in the analysis of random doping induced fluctuations through the linearization of transport equations are carefully considered. It is proved that, in the framework of the density-gradient model, the terminal currents, transconductance, and threshold voltages of MOSFET and SOI devices are more or less linear with respect to the magnitude of variation of the doping fluctuations. This fact supports the hypothesis of the linearization techniques and explains the good agreement existent in the literature between the results of statistical analysis of semiconductor devices by using the linearization technique and the Monte-Carlo simulations

Keywords

Boltzmann equation; MOSFET; Monte Carlo methods; Poisson equation; fluctuations; linearisation techniques; semiconductor device models; semiconductor doping; silicon-on-insulator; statistical analysis; MOSFET; Monte-Carlo simulation; SOI devices; density-gradient model; hypothesis; linearization techniques; metal-oxide-semiconductor field effect transistor; random doping induced fluctuation; semiconductor devices; silicon-on-insulator; statistical analysis; terminal current; threshold voltage; transconductance; transport equation; Equations; Fluctuations; Linearization techniques; MOSFET circuits; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling; Statistical analysis; Threshold voltage; Transconductance; linearization; random doping fluctuations;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282884

Filename

4061627