DocumentCode :
3233954
Title :
Through-wafer interconnects using carbon nanotubes synthesized by chemical vapor deposition
Author :
Xu, Ting ; Wang, Zhihong ; Miao, Jianmin
Author_Institution :
Micromachines Centre, Nanyang Technol. Univ., Singapore
fYear :
2008
fDate :
6-9 Jan. 2008
Firstpage :
471
Lastpage :
475
Abstract :
In this paper, through-wafer interconnects using carbon nanotube bundles grown by thermal chemical vapor deposition have been reported. The authors have demonstrated a reliable process of synthesizing aligned carbon nanotube bundles through two bonded silicon wafers. The top wafer (100 mum thick) with patterned through-holes allows carbon nanotubes to grow vertically from the catalyst layer (Fe) on the bottom wafer. The maximum length and minimum diameter of the bundles are 200 mum and 30 mum, respectively. The resistivity of the bundles is measured to be 0.0148 Omegacm by using a nano-manipulator.
Keywords :
carbon nanotubes; catalysts; chemical vapour deposition; integrated circuit interconnections; iron; silicon; Si; carbon nanotubes; catalyst layer; nanomanipulator; silicon wafers; size 100 mum; size 200 mum; size 30 mum; thermal chemical vapor deposition; through-wafer interconnects; Carbon nanotubes; Chemical technology; Chemical vapor deposition; Copper; Electric resistance; Electronic packaging thermal management; Integrated circuit interconnections; Iron; Silicon; Wafer bonding; Carbon nanotubes; Thermal chemical vapor deposition; Through-wafer interconnects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
Type :
conf
DOI :
10.1109/NEMS.2008.4484374
Filename :
4484374
Link To Document :
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