Title :
3-Dimensional Analysis on the GIDL Current of Body-tied Triple Gate FinFET
Author :
Byun, Hyun-Sook ; Lee, Won-Sok ; Lee, Jin-Woo ; Lee, Keun-Ho ; Park, Young-Kwan ; Kong, Jeong-Taek
Author_Institution :
CAE Team, Samsung Electron. Co., Ltd., Gyeonggi-Do
Abstract :
Triple gate FinFET is emerging as a promising candidate for the future CMOS device structures because of its immunity to short-channel effect. However, the suppression of GIDL is a significant challenge for its application. In this paper, we discuss the characteristics of GIDL on FinFET and extensively analyze the influence of the device technology on GIDL. The analysis is expected to give guidelines to the future development of triple gate FinFET
Keywords :
MOSFET; semiconductor technology; 3-dimensional analysis; GIDL suppression; body-tied triple gate FinFET; device technology; gate-induced drain leakage current; short-channel effect; CMOS technology; Computer aided engineering; Controllability; Doping profiles; FinFETs; Guidelines; Immune system; Leakage current; Threshold voltage; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282887
