DocumentCode :
3233973
Title :
Modeling of High Frequency Noise in SiGe HBTs
Author :
Sakalas, P. ; Chakravorty, A. ; Schroter, M. ; Ramonas, M. ; Herricht, J. ; Shimukovitch, A. ; Jungemann, C.
Author_Institution :
CEDIC, Dresden Univ. of Technol.
fYear :
2006
fDate :
6-8 Sept. 2006
Firstpage :
271
Lastpage :
274
Abstract :
A compact model solution, consistent with the system theory for correlated base and collector shot noise sources, was derived and implemented in the bipolar transistor compact model HICUM using Verilog-AMS. Simulations were performed using ADS 2005A. Results were tested against measured noise parameters for high-speed conventional and LEC doped SiGe HBTs. Perfect agreement between simulated and measured data confirmed model validity
Keywords :
Ge-Si alloys; hardware description languages; heterojunction bipolar transistors; semiconductor device models; shot noise; system theory; ADS 2005A; SiGe; SiGe HBT; Verilog-AMS; bipolar transistor compact model HICUM; collector shot noise source; heterojunction bipolar transistors; high frequency noise modeling; system theory; Bipolar transistors; Circuit noise; Circuit simulation; Computational modeling; Frequency; Germanium silicon alloys; Hardware design languages; Low-frequency noise; Silicon germanium; Transfer functions; HICUM; Noise; SiGe Heterojunction bipolar transistors; Verilog-AMS; correlation; noise modeling; shot noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
Type :
conf
DOI :
10.1109/SISPAD.2006.282888
Filename :
4061631
Link To Document :
بازگشت