Title :
Monte Carlo simulation of 3D nonvolatile memory
Author :
Ohkura, Yasuyuki ; Suzuki, Chikashi
Author_Institution :
Semicond. Leading Edge Technol. Inc., Ibaraki
Abstract :
3D fullband Monte Carlo simulator is applied to the analysis of floating gate injection current of nonvolatile memory. The simulation is performed with realistic number of particles, so the fluctuations due to the motion of particles in 3D device structure are discussed. By comparing the results with those by 2D calculation, the necessity of full 3D simulation both due to the capacitance coupling and particle fluctuation is shown to calculate read/write characteristics
Keywords :
Monte Carlo methods; random-access storage; 3D device structure; 3D nonvolatile memory; Monte Carlo simulation; capacitance coupling; floating gate injection current analysis; particle fluctuation; particle motion; Acoustic scattering; Analytical models; Capacitance; Electrons; Fluctuations; Monte Carlo methods; Nonvolatile memory; Optical scattering; Particle scattering; Plasmons; 3D effect; Fullband Monte Carlo; Nonvolatile memory;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282890
