Title :
Thin-film SOI p-MOSFET from epitaxial lateral overgrowth (ELO) with a 200 Å nitrided SiO2 backgate and large ΔVT,top Vs VG,back for ultra low power
Author :
Chang, Julie C. ; Denton, Jack P. ; Neudeck, Gerold W.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
30 Sep-3 Oct 1996
Abstract :
To achieve faster circuits with increased circuit density and reduced power, fully depleted (FD) dual-gated (DG) thin-film SOI-MOSFETs with an isolated buried backgate have been fabricated by using epitaxial lateral overgrowth (ELO) into SOI islands. Situated in an SOI island the fully depleted DG SOI MOSFET allows independent operation of both topgate and backgate, which is buried and totally isolated from all other devices. This provides a method to control the threshold voltage change of the top MOSFET with a bias on the backgate for fully-depleted devices. For example, the backgate can switch the top MOSFET to more `on´ for larger drive currents and to more `off´ for lower subthreshold leakage currents
Keywords :
MOSFET; isolation technology; leakage currents; nitridation; semiconductor epitaxial layers; semiconductor growth; silicon-on-insulator; 200 angstrom; Si; circuit density; drive currents; dual-gated devices; epitaxial lateral overgrowth; isolated buried backgate; nitrided backgate; subthreshold leakage currents; thin-film SOI p-MOSFET; threshold voltage change; topgate; ultra low power; Capacitors; Inductors; Insulation; Logic; MOSFET circuits; Stacking; Thermal stresses; Thin film devices; Transistors;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552507
