Effect of Body Doping on the Scaling of Ultrathin SOI MOSFETs

This paper presents a detailed simulation study on the body doping effect on scaling of ultrathin silicon-on-insulator (SOI) MOSFETs with standard thick buried oxide (BOX). By employing high-k dielectrics, it is demonstrated that the minimum scalable channel length L_min for fully-depleted (FD) SOI MOSFETs can be significantly improved from L _min ~5t_Si for undoped case to L_min ~2t _Si with doping. By scaling the gate insulator thickness toward its tunneling limit, it is possible to scale doped body FDSOI to ITRS 45 nm technology node (TN). Quantum mechanical and threshold considerations will ultimately limit how high a body doping can be used