Title :
Correlation between the static and dynamic characteristics of the 4.5 kV self-aligned trench IGBT
Author :
Minato, T. ; Thapar, Naresh ; Baliga, B.Jayant
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Japan
Abstract :
In this paper, a new procedure to obtain the Reverse Biased Safe Operating Area (RBSOA) of a 4.5 kV self-aligned trench IGBT is presented. Using this procedure, the high voltage RBSOA boundary of a trench IGBT is directly obtained from its static blocking characteristics extended to very high current densities, thereby saving a large amount of computation time and effort required in obtaining the RBSOA through extensive dynamic simulations. In addition, observation of humps in the collector current waveforms during inductive load turn-off are also reported and analyzed
Keywords :
carrier density; current density; impact ionisation; insulated gate bipolar transistors; semiconductor device reliability; 4.5 kV; carrier concentration; collector current waveform humps; dynamic characteristics; high voltage RBSOA boundary; impact ionization rate; inductive load turn-off; reverse biased safe operating area; self-aligned trench IGBT; static blocking characteristics; static characteristics; very high current densities; Anodes; Current density; Electric variables; Impact ionization; Insulated gate bipolar transistors; Numerical simulation; P-i-n diodes; Semiconductor optical amplifiers; Ultra large scale integration; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601439
