Title :
Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies
Author :
Karner, M. ; Ungersboeck, E. ; Gehring, A. ; Holzer, S. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., TU Wien
Abstract :
We study the influence of uniaxial <110> stress on the gate leakage current in advanced silicon-on-insulator (SOI) CMOS devices. The strain-induced shifts of the conduction band valleys and the valence bands are calculated using linear deformation potential theory. After the evaluation of the band edge profile, using a numerical Schrodinger Poisson (S/P) solver, the leakage current is estimated with the quasi-bound states tunneling formalism in a post processing step. The energy shifts of the primed and unprimed subband ladders due to the applied stress yield a re-population of the subbands. This results in a slight decrease for tensile stress and an increase for compressive stress of the leakage current, respectively. These results are in agreement with experimental studies on n-MOS devices
Keywords :
MIS devices; Poisson equation; Schrodinger equation; leakage currents; semiconductor device models; silicon-on-insulator; SOI CMOS device; gate leakage current; linear deformation potential theory; n-MOS device; numerical Schrodinger Poisson solver; quasibound states tunneling formalism; silicon-on-insulator; strain-induced shift; CMOS technology; Capacitive sensors; Compressive stress; Leakage current; MOSFETs; Microelectronics; Silicon; Tensile stress; Tunneling; Uniaxial strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282898
