• DocumentCode
    3234188
  • Title

    The growth kinetics of colloidal InP nanocrystals

  • Author

    Zhang, Jianbing ; Zhang, Daoli ; Yuan, Lin ; Hu, Yunxiang

  • Author_Institution
    Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan
  • fYear
    2008
  • fDate
    6-9 Jan. 2008
  • Firstpage
    510
  • Lastpage
    514
  • Abstract
    InP nanocrystals were synthesized using dehalosilylation reaction in trioctylphosphine oxide (TOPO), and they were characterized by Powder X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-vis spectrometer and fluorescent spectrometer. The growth process was studied by monitoring the photoluminescence (PL) and UV-vis absorption spectra during the whole synthetic procedure. The growth process involves: formation of precursors, decomposition of the precursors, nucleation, growth of the nuclei, Ostwald ripening, and annealing of the nanoparticles, and some of them overlap in time. Many defects are introduced in the growth process of the nuclei, but the annealing procedure will diminish the defects, which is critical for producing well crystalline InP nanocrystals.
  • Keywords
    III-V semiconductors; X-ray diffraction; annealing; colloidal crystals; fluorescence; indium compounds; nanoparticles; nanotechnology; nucleation; photoluminescence; semiconductor growth; transmission electron microscopy; ultraviolet spectra; visible spectra; InP; Ostwald ripening; UV-vis absorption spectra; annealing; colloidal nanocrystals; decomposition; dehalosilylation reaction; fluorescence; nanoparticles; nucleation; photoluminescence; powder X-ray diffraction; transmission electron microscopy; trioctylphosphine oxide; Annealing; Fluorescence; Indium phosphide; Kinetic theory; Nanocrystals; Powders; Spectroscopy; Transmission electron microscopy; X-ray diffraction; X-ray scattering; InP; colloidal; defect; growth kinetics; nanocrystals; quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
  • Conference_Location
    Sanya
  • Print_ISBN
    978-1-4244-1907-4
  • Electronic_ISBN
    978-1-4244-1908-1
  • Type

    conf

  • DOI
    10.1109/NEMS.2008.4484383
  • Filename
    4484383