DocumentCode
3234188
Title
The growth kinetics of colloidal InP nanocrystals
Author
Zhang, Jianbing ; Zhang, Daoli ; Yuan, Lin ; Hu, Yunxiang
Author_Institution
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan
fYear
2008
fDate
6-9 Jan. 2008
Firstpage
510
Lastpage
514
Abstract
InP nanocrystals were synthesized using dehalosilylation reaction in trioctylphosphine oxide (TOPO), and they were characterized by Powder X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-vis spectrometer and fluorescent spectrometer. The growth process was studied by monitoring the photoluminescence (PL) and UV-vis absorption spectra during the whole synthetic procedure. The growth process involves: formation of precursors, decomposition of the precursors, nucleation, growth of the nuclei, Ostwald ripening, and annealing of the nanoparticles, and some of them overlap in time. Many defects are introduced in the growth process of the nuclei, but the annealing procedure will diminish the defects, which is critical for producing well crystalline InP nanocrystals.
Keywords
III-V semiconductors; X-ray diffraction; annealing; colloidal crystals; fluorescence; indium compounds; nanoparticles; nanotechnology; nucleation; photoluminescence; semiconductor growth; transmission electron microscopy; ultraviolet spectra; visible spectra; InP; Ostwald ripening; UV-vis absorption spectra; annealing; colloidal nanocrystals; decomposition; dehalosilylation reaction; fluorescence; nanoparticles; nucleation; photoluminescence; powder X-ray diffraction; transmission electron microscopy; trioctylphosphine oxide; Annealing; Fluorescence; Indium phosphide; Kinetic theory; Nanocrystals; Powders; Spectroscopy; Transmission electron microscopy; X-ray diffraction; X-ray scattering; InP; colloidal; defect; growth kinetics; nanocrystals; quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location
Sanya
Print_ISBN
978-1-4244-1907-4
Electronic_ISBN
978-1-4244-1908-1
Type
conf
DOI
10.1109/NEMS.2008.4484383
Filename
4484383
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