A Madelung Fluid Based Density Gradient Model for Large Barrier Tunneling Calculations

Author

Narayanan, Venkat ; Kan, Edwin C.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

318

Lastpage

321

Abstract

A modified density gradient model is derived for the carrier density inside a large potential barrier from the Madelung-Bohm fluid theory of quantum mechanics (QM) and the WKB approximation. The derived model is used with simple additional assumptions on the nature of the inversion layer and dissipationless transport, and shows an excellent match to experimental tunneling current data. Though the present derivation is one-dimensional, the model shows promise for generalization to 2-D and 3-D

Keywords

Fermi level; WKB calculations; carrier density; conduction bands; inversion layers; tunnelling; Fermi level; Madelung fluid based density gradient model; Madelung-Bohm fluid theory; QM; WKB approximation; barrier tunneling calculations; carrier density; conduction band; inversion layer; modified density gradient model; potential barrier; quantum mechanics; scattering process; Charge carrier density; Computational modeling; Differential equations; Distribution functions; Eigenvalues and eigenfunctions; Gradient methods; Quantum computing; Quantum mechanics; Schrodinger equation; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282899

Filename

4061642