Title :
A Madelung Fluid Based Density Gradient Model for Large Barrier Tunneling Calculations
Author :
Narayanan, Venkat ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
Abstract :
A modified density gradient model is derived for the carrier density inside a large potential barrier from the Madelung-Bohm fluid theory of quantum mechanics (QM) and the WKB approximation. The derived model is used with simple additional assumptions on the nature of the inversion layer and dissipationless transport, and shows an excellent match to experimental tunneling current data. Though the present derivation is one-dimensional, the model shows promise for generalization to 2-D and 3-D
Keywords :
Fermi level; WKB calculations; carrier density; conduction bands; inversion layers; tunnelling; Fermi level; Madelung fluid based density gradient model; Madelung-Bohm fluid theory; QM; WKB approximation; barrier tunneling calculations; carrier density; conduction band; inversion layer; modified density gradient model; potential barrier; quantum mechanics; scattering process; Charge carrier density; Computational modeling; Differential equations; Distribution functions; Eigenvalues and eigenfunctions; Gradient methods; Quantum computing; Quantum mechanics; Schrodinger equation; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282899
