Title :
Modeling of the Leakage Current Distribution of 16M Stacked Single Crystal (SC)-like SOI pMOSFETs using Green´s function method
Author :
Hwang, Byungjoon ; Shim, Byung Sup ; Jin, Seonghoon ; Chung, In-Young ; Jung, Soon-Moon ; Kim, Kinam ; Park, Young June ; Min, Hong Shick
Author_Institution :
Sch. of Electr. Eng. & Nano-Syst. Inst., Seoul Nat. Univ.
Abstract :
An analytical leakage current model is proposed to explain the large magnitude and the broad variation of the leakage current found in the 16M stacked single crystal (SC)-like SOI transistors which have the re-crystallized amorphous-silicon body. This model shows that the parasitic BJT amplification effect should be considered in addition to the trap-assisted tunneling mechanism caused by a randomly located grain boundary and interface traps. Also, the leakage current distribution of the 16M stacked SC-like SOI transistors is analyzed and simulated by utilizing Green´s function method
Keywords :
Green´s function methods; MOSFET; bipolar transistors; leakage currents; semiconductor device models; silicon-on-insulator; tunnelling; 16M stacked single crystal like SOI; Green´s function method; leakage current distribution; metal oxide semiconductor field effect transistor; pMOSFET; parasitic BJT amplification effect; recrystallized amorphous-silicon; silicon-on-insulator; trap-assisted tunneling mechanism; Analytical models; DC generators; Grain boundaries; Green function; Green´s function methods; Inverters; Leakage current; MOSFET circuits; Silicon; Tunneling; BJT-amplification; component; green´s function); single crystal(SC)-like; stacked;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282903
