DocumentCode :
3234283
Title :
S-parameter characterization of GaAs gate SISFETs at liquid nitrogen temperatures
Author :
Kwark, Y. ; Solomon, P. ; La Tulipe, D.
Author_Institution :
IBM T.J. Watson Res. Lab., Yorktown Heights, NY, USA
fYear :
1989
fDate :
7-9 Aug 1989
Firstpage :
208
Lastpage :
217
Abstract :
SISFETs where characterized at both room and liquid nitrogen (LN) temperatures to evaluate their dynamic performance. Equivalent circuit parameters obtained from low-frequency parametric measurements were compared to those deduced from S-parameter measurements. The measurements were made on a bifurcated gate structure consisting of two identical gate fingers totalling 70 μm in width. Microwave characterization of the devices relied on measurement of the S-parameters over a 50-MHz-26-GHz range using an HP8510B network analyzer and cascade probes. The room- and LN-temperature characterization of SISFETs shows no evidence of anomalous behavior. The equivalent circuit parameters deduced from microwave measurements are consistent with those derived from the low-frequency measurements. The low gate leakage, improved gm, and unchanged gate capacitance result in a high fT at LN temperatures, indicating potential for enhanced performance in digital systems
Keywords :
III-V semiconductors; S-parameters; gallium arsenide; insulated gate field effect transistors; semiconductor device models; solid-state microwave devices; 50 to 26000 MHz; 70 micron; 77 K; GaAs; HP8510B network analyzer; LN-temperature characterization; S-parameter characterization; S-parameter measurements; SISFETs; bifurcated gate structure; cascade probes; equivalent circuit parameters; gate capacitance; gate leakage; liquid nitrogen temperatures; low-frequency parametric measurements; microwave measurements; models; room temperature; semiconductors; two identical gate fingers; Bifurcation; Capacitance; Equivalent circuits; Fingers; Gate leakage; Microwave devices; Microwave measurements; Nitrogen; Probes; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Type :
conf
DOI :
10.1109/CORNEL.1989.79837
Filename :
79837
Link To Document :
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