Analysis of edge effects in the mesa isolated nMOS SOI

Author

Tseng, Y.-C. ; Collett, J. ; Vu, T.O. ; Cable, J.S. ; Woo, J.C.S.

Author_Institution

California Univ., Los Angeles, CA, USA

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

90

Lastpage

91

Abstract

Uses both I-V measurements and charge pumping methods to investigate the sidewall edge effects in mesa isolation. There are two major issues that have to be solved related to edge effects in the mesa. One is the `hump´ in I-V characteristics which can be solved by a tilt field implant. The other issue is the extra interface states along the sidewall which does not scale linearly with channel length. Therefore, in deep submicron devices, the extra interface states can become the same order of magnitude as the interface states from the channel. As a result of the noise from the extra interface states, application of mesa isolation to SOI CMOS on analog circuits needs further optimization

Keywords

CMOS analogue integrated circuits; MOSFET; VLSI; characteristics measurement; integrated circuit measurement; integrated circuit noise; integrated circuit technology; interface states; isolation technology; silicon-on-insulator; I-V measurements; SOI CMOS; analog circuits; charge pumping methods; deep submicron devices; interface states; mesa isolated nMOS SOI; noise; sidewall edge effects; tilt field implant; CMOS technology; Charge measurement; Charge pumps; Circuits; Current measurement; Implants; Interface states; MOS devices; Pulse measurements; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552508

Filename

552508