DocumentCode
3234316
Title
Fast gate drive for SiC-JFET using a conventional driver for MOSFETs and additional protections
Author
Orellana, Alvaro ; Piepenbreier, Bernhard
Author_Institution
Electr. Drives Dept., Erlangen-Nurnberg Univ., Erlangen, Germany
Volume
1
fYear
2004
fDate
2-6 Nov. 2004
Firstpage
938
Abstract
A new gate drive for SiC-JFET (silicon carbide junction field effect transistor) is developed and tested on a half-bridge. For the realization of a fast gate drive, which offers full protection for the SiC-JFET, a gate drive concept is firstly chosen. The gate drive unit has an output stage made for MOSFETs, a new kind of fast signal isolator, short circuit protection and overvoltage protection.
Keywords
junction gate field effect transistors; overvoltage protection; power MOSFET; short-circuit currents; silicon compounds; MOSFET; SiC-JFET; fast gate drive; fast signal isolator; overvoltage protection; short circuit protection; silicon carbide junction field effect transistor; Bridge circuits; Capacitance; Isolators; MOSFETs; Protection; Semiconductor diodes; Semiconductor materials; Silicon carbide; Switching loss; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 2004. IECON 2004. 30th Annual Conference of IEEE
Print_ISBN
0-7803-8730-9
Type
conf
DOI
10.1109/IECON.2004.1433441
Filename
1433441
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