A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies

Author

Pham, Anh T. ; Jungemann, Christoph ; Meinerzhagen, B.

Author_Institution

BST, TU Braunschweig

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

361

Lastpage

364

Abstract

The valence bands of silicon can be expanded exactly by spherical harmonics only up to the energy, where the bands reach the surface of the Brillouin zone (BZ). For higher energies an approximation is required. Therefore an anisotropic extension of the band structure is presented which is determined by matching the density of states (DOS) and moments of the inverse group velocity of the exact full-band (FB) structure. The Boltzmann equation (BE) based on the exact FB at low energies and the approximation at high energies is solved by the spherical harmonic expansion (SHE) method for bulk silicon including impact ionization. The results are compared to Monte Carlo (MC) data based on the exact FB structure

Keywords

Boltzmann equation; Brillouin zones; valence bands; Boltzmann equation; Brillouin zone; band structure; bulk silicon; full-band spherical harmonics expansion; valence band; Anisotropic magnetoresistance; Binary search trees; Boltzmann equation; Dispersion; Hot carriers; Impact ionization; Monte Carlo methods; Silicon; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282909

Filename

4061652