Title :
High-temperature Bebavior Of Mos Devices
Author_Institution :
Clemson University
Keywords :
Doping; MOS devices; MOSFET circuits; Protection; Resistors; Semiconductor diodes; Substrates; Temperature; Thermal resistance; Voltage;
Conference_Titel :
Southeastcon '81. Conference Proceedings
Conference_Location :
Huntsville, AL, USA
DOI :
10.1109/SECON.1981.673569