Title :
Electric properties depending on temperature in SiOC dielectric layer
Author_Institution :
Cheongju University 1 (School of Electronics and Information Engineering, Cheongju University), China
Abstract :
The SiOC films by chemical vapor deposition have been researched the electrical properties by leakage current. The chemical properties of SiOC film was divided into organic, hybrid and inorganic types according to the deposition condition. The leakage current also depended on the chemical properties of the films. The current increased on the SiOC film with polarity, which has many grains. These SiOC film with polarity displayed the increasing the current according to the increasing the substrate temperature. However, the SiOC film without grains decreased the leakage current. Especially, the leakage current of the B27 sample with hybrid type decreased due to the increase the substrate temperature. The dependence on the temperature was only found the sample B27. It was confirmed that the SiOC film with hybrid type is more stable low dielectric materials in high temperature.
Keywords :
Annealing; Chemical vapor deposition; Dielectric constant; Dielectric materials; Leakage current; Pentacene; Plasma temperature; Semiconductor films; Substrates; Temperature dependence; SiOC film; leakage current; pentacene deposited surface; polarity;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya, China
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
DOI :
10.1109/NEMS.2008.4484393
