Title :
First Self-Consistent Full-Band 2D Monte Carlo 2D Poisson Device Solver for Modeling SiGe Heterojunction p-Channel Devices
Author :
Krishnan, Santhosh ; Vasileska, Dragica
Author_Institution :
Intel Corp., Chandler, AZ
Abstract :
In this work we are concerned with proper calculation of the valence band-structure of Si and strained SiGe material systems. The hole band-structure is complicated by the strong anisotropy, nonparabolicity and warping of the heavy-hole and light-hole bands. As the spin-orbit splitting is about 44.2 (296) meV in Si (Ge), one also needs to take the split-off band into account to account for inter and intra-band scattering events to model transport properly. Thus, ignoring the contribution of the distant conduction bands in Si, one has to consider at the very minimum six bands (the heavy-hole, the light hole and the split-off bands multiplied by 2 due to spin degeneracy)
Keywords :
Ge-Si alloys; Monte Carlo methods; SCF calculations; semiconductor device models; semiconductor heterojunctions; valence bands; SiGe; SiGe heterojunction p-channel devices modeling; full-band 2D Monte Carlo Poisson device solver; intra-band scattering; self-consistent device solver; valence band-structure; Capacitive sensors; Circuits; Dielectric materials; Germanium silicon alloys; Heterojunctions; High K dielectric materials; MOSFETs; Monte Carlo methods; Silicon germanium; Voltage; SiGe devices; particle-based device simulations; strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282910