Title :
Analysis of Electronic Threshold of PRAM Cell Operation
Author :
Kim, YoungTae ; Lee, KeunHo ; Park, YoungKwan ; Kong, JeongTaek
Author_Institution :
CAE Team, Samsung Electron. Co. Ltd., Gyeonggi-Do
Abstract :
In this paper, the analysis of the switching characteristics of a PRAM cell is performed with 2-dimentional transport simulation considering with band gap model. The behaviors of the basic I-V and key characteristic parameters are well described with the simulation. The scaling analysis on the electrical switching demonstrates that the threshold voltage increases as the bottom electrode is scaled down and it will be one of key concerns of future device scaling and development
Keywords :
energy gap; random-access storage; semiconductor device models; semiconductor storage; PRAM cell operation; band gap model; electrical switching; electronic threshold; phase-change random access memory; scaling analysis; transport simulation; Amorphous materials; Analytical models; Circuit simulation; Computer aided engineering; Crystallization; Doping; Electron traps; Performance analysis; Phase change random access memory; Threshold voltage; PRAM; phase change; simulation; snap-back; switching;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282917
