DocumentCode :
3234598
Title :
Design Optimization of Large Area Si/SiGe Thermoelectric Generators
Author :
Wagner, M. ; Span, G. ; Holzert, S. ; Grasser, T.
Author_Institution :
Inst. for Microelectron., TU Wien
fYear :
2006
fDate :
6-8 Sept. 2006
Firstpage :
397
Lastpage :
400
Abstract :
We present a comparison of large area pn-junction thermoelectric generators and classical thermoelectric modules. In contrast to conventional thermocouples, the thermal generation of carriers is explicitly used within the new device structures. The gradient of the pn-junction´s built-in potential causes the separation of the thermally generated carriers. For the application of waste heat recovery, the device is exposed to an external temperature gradient along the pn-junction which induces driving forces to both electrons and holes from the heated to the cooled end of the structure, where contacts are applied. The influence of device geometry and material composition on the device behavior is investigated. Simulation results obtained by our device and circuit simulator MiNiMOS-NT working in conjunction with the optimization framework SIESTA are presented
Keywords :
Ge-Si alloys; elemental semiconductors; heat recovery; optimisation; p-n junctions; semiconductor device models; semiconductor devices; semiconductor materials; silicon; thermoelectric conversion; MiNiMOS-NT; SIESTA; Si-SiGe; circuit simulator; external temperature gradient; large area Si-SiGe thermoelectric generator; optimization; pn-junction; thermally generated carrier; waste heat recovery; Charge carrier processes; Circuit simulation; Design optimization; Geometry; Germanium silicon alloys; Heat recovery; Silicon germanium; Temperature; Thermoelectricity; Waste heat;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
Type :
conf
DOI :
10.1109/SISPAD.2006.282918
Filename :
4061661
Link To Document :
بازگشت