Title :
A monolithic W-band high-gain LNA/detector for millimeter wave radiometric imaging applications
Author :
Lo, D.C.W. ; Dow, G.S. ; Allen, B.R. ; Yujiri, L. ; Mussetto, M. ; Huang, T.W. ; Wang, Huifang ; Biedenbender, M.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
We have demonstrated a monolithic W-band six-stage low noise amplifier/detector, using 0.1 /spl mu/m passivated pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As/GaAs HEMT technology. The front-end LNA, over the band from 85 to 96 GHz has achieved an average small signal gain of 40 dB which is the highest gain value ever reported for a MMIC operating in the W-band. The measured minimum resolvable temperature of the MMIC is about 1.6 K, where the dominant noise source is attributed to be the 1/f noise of the monolithically integrated HEMT diode.<>
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; millimetre wave detectors; millimetre wave imaging; millimetre wave measurement; radiometry; 1/f noise; 40 dB; 85 to 96 GHz; Al/sub 0.25/Ga/sub 0.75/As-In/sub 0.22/Ga/sub 0.78/As-GaAs; W-band MMIC; millimeter wave radiometric imaging; minimum resolvable temperature; monolithic W-band high-gain detector; monolithic W-band six-stage low noise amplifier; monolithically integrated HEMT diode; noise source; pseudomorphic HEMT technology; small signal gain; Detectors; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; Millimeter wave technology; Noise measurement; Signal resolution; Temperature measurement;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406167
