• DocumentCode
    3234669
  • Title

    Design of a 4–12GHz frequency doubler MMIC based on InGaP/GaAs HBT process

  • Author

    Wu, Yonghui ; Chen, Xing ; Wu, Hongjiang ; Liao, Bin

  • Author_Institution
    GaAs Centre, CETC, Shijiazhuang, China
  • fYear
    2010
  • fDate
    8-11 May 2010
  • Firstpage
    1045
  • Lastpage
    1048
  • Abstract
    A compact monolithic InGaP/GaAs HBT frequency doubler has been presented. This prototype MMIC is capable to provide efficient conversion gain and high harmonic rejection from 4 to 12 GHz at the output. In this frequency doubler circuit, a novel push-push circuit configuration is used. We optimized the measurement system by using a Network Analyzer, instead of the traditional Spectrum Analyzer. The whole frequency doubler chip operates from a single +5 V supply voltage and consumes only 110 mA of current typically. The circuit has conversion gain of 14 dB over the output frequency range and provides saturated output power of 14 dBm when the input power larger -18 dBm. The chip also achieves excellent fundamental and third harmonic frequency rejection better than 28 dBc. The total size of this compact chip is 1.5 mm2. Thus, this frequency doubler can be used as a low-cost insertion block to achieve any stable local-oscillation signals by multiplying the high quality voltage controlled oscillators at low frequencies.
  • Keywords
    MMIC; frequency multipliers; heterojunction bipolar transistors; HBT process; compact monolithic HBT frequency doubler; efficient conversion gain; frequency 4 GHz to 12 GHz; frequency doubler MMIC; frequency doubler chip; frequency doubler circuit; harmonic frequency rejection; high harmonic rejection; high quality voltage controlled oscillator; low cost insertion block; measurement system; network analyzer; prototype MMIC; push-push circuit configuration; spectrum analyzer; stable local-oscillation signal; supply voltage; Circuits; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Prototypes; Semiconductor device measurement; Spectral analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-5705-2
  • Type

    conf

  • DOI
    10.1109/ICMMT.2010.5525097
  • Filename
    5525097