DocumentCode :
3234669
Title :
Design of a 4–12GHz frequency doubler MMIC based on InGaP/GaAs HBT process
Author :
Wu, Yonghui ; Chen, Xing ; Wu, Hongjiang ; Liao, Bin
Author_Institution :
GaAs Centre, CETC, Shijiazhuang, China
fYear :
2010
fDate :
8-11 May 2010
Firstpage :
1045
Lastpage :
1048
Abstract :
A compact monolithic InGaP/GaAs HBT frequency doubler has been presented. This prototype MMIC is capable to provide efficient conversion gain and high harmonic rejection from 4 to 12 GHz at the output. In this frequency doubler circuit, a novel push-push circuit configuration is used. We optimized the measurement system by using a Network Analyzer, instead of the traditional Spectrum Analyzer. The whole frequency doubler chip operates from a single +5 V supply voltage and consumes only 110 mA of current typically. The circuit has conversion gain of 14 dB over the output frequency range and provides saturated output power of 14 dBm when the input power larger -18 dBm. The chip also achieves excellent fundamental and third harmonic frequency rejection better than 28 dBc. The total size of this compact chip is 1.5 mm2. Thus, this frequency doubler can be used as a low-cost insertion block to achieve any stable local-oscillation signals by multiplying the high quality voltage controlled oscillators at low frequencies.
Keywords :
MMIC; frequency multipliers; heterojunction bipolar transistors; HBT process; compact monolithic HBT frequency doubler; efficient conversion gain; frequency 4 GHz to 12 GHz; frequency doubler MMIC; frequency doubler chip; frequency doubler circuit; harmonic frequency rejection; high harmonic rejection; high quality voltage controlled oscillator; low cost insertion block; measurement system; network analyzer; prototype MMIC; push-push circuit configuration; spectrum analyzer; stable local-oscillation signal; supply voltage; Circuits; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Prototypes; Semiconductor device measurement; Spectral analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
Type :
conf
DOI :
10.1109/ICMMT.2010.5525097
Filename :
5525097
Link To Document :
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