Title :
Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs
Author :
Pospieszalski, M.W. ; Lakatosh, W.J. ; Nguyen, L.D. ; Lui, Max ; Takyiu Lin ; Minh Le ; Thompson, M.A. ; Delaney, M.J.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
Design, construction and performance of several cryogenically-coolable millimeter-wave amplifiers for radio astronomy applications, using AlInAs/GaInAs/InP HEMTs, are presented. The examples include a 40-50 GHz amplifier with an average noise temperature of about 15 K and a 60-80 GHz amplifier yielding a laboratory receiver noise temperature of 37 K at 60 GHz and 50 K at 75 GHz.<>
Keywords :
HEMT circuits; III-V semiconductors; aluminium compounds; circuit noise; cryogenic electronics; gallium arsenide; indium compounds; millimetre wave amplifiers; 40 to 80 GHz; AlInAs-GaInAs-InP; E-band; EHF; HEMT; MM-wave amplifiers; Q-band; cryogenically-coolable amplifiers; millimeter-wave amplifiers; radio astronomy applications; Bandwidth; Cryogenics; Equivalent circuits; Extraterrestrial measurements; HEMTs; Indium phosphide; MODFETs; Observatories; Radio astronomy; Temperature measurement;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406168
