Q- and V-band MMIC chip set using 0.1 /spl mu/m millimeter-wave low noise InP HEMTs

Author

Isobe, R. ; Wong, Charence ; Potter, Andrew ; Long Tran ; Delaney, M. ; Rhodes, R. ; Jang, Daeung ; Loi Nguyen ; Minh Le

Author_Institution

Hughes Aircraft Co., El Segundo, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

1133

Abstract

A MMIC chip set for millimeter-wave (mmW) communication systems has been developed. The highlights are a 3-stage Q-band LNA with 2.0 dB NF/22 dB of gain and a 2-stage V-band LNA with 2.3 dB NF/15 dB of gain. Altogether, 7 MMIC chips (2 LNAs, 2 mixers, 2 downconverters, and 1 LO amplifier) make up this effort to develop low noise mmW building block functions in the InP HEMT technology.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; field effect MIMIC; indium compounds; integrated circuit noise; millimetre wave frequency convertors; millimetre wave mixers; 15 dB; 2 dB; 2-stage LNA; 2.3 dB; 22 dB; 3-stage LNA; EHF; InP; LO amplifier; MM-wave ICs; MMIC chip set; Q-band; V-band; downconverters; millimeter-wave communication systems; millimeter-wave low noise HEMTs; mixers; Gain; HEMTs; Indium phosphide; MMICs; MODFETs; Millimeter wave communication; Millimeter wave technology; Noise figure; Noise measurement; Pollution measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406172

Filename

406172