DocumentCode
3234822
Title
GaAs MMIC thermal modeling for calculation of accurate channel temperatures
Author
Ferrara, V.J. ; Garnett, A. ; Sang Park ; Solan, A.B.
Author_Institution
Lockheed Sanders Avionics, Nashua, NH, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
1143
Abstract
To accurately determine GaAs MMIC channel temperatures, an automated model generation program has been developed. The results were correlated with IR scanning techniques to verify the finite element model. This model was used to generate a unique temperature profile for each device, which is used for higher level models, saving time while maintaining accuracy.<>
Keywords
III-V semiconductors; MMIC; electronic engineering computing; finite element analysis; gallium arsenide; integrated circuit modelling; temperature distribution; thermal analysis; FEM; GaAs; MMIC thermal modeling; automated model generation program; channel temperature calculation; finite element model; temperature profile; Character generation; Electrical resistance measurement; Finite element methods; Gallium arsenide; MMICs; Maintenance; Pollution measurement; Positron emission tomography; Temperature measurement; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406174
Filename
406174
Link To Document