Title :
GaAs MMIC thermal modeling for calculation of accurate channel temperatures
Author :
Ferrara, V.J. ; Garnett, A. ; Sang Park ; Solan, A.B.
Author_Institution :
Lockheed Sanders Avionics, Nashua, NH, USA
Abstract :
To accurately determine GaAs MMIC channel temperatures, an automated model generation program has been developed. The results were correlated with IR scanning techniques to verify the finite element model. This model was used to generate a unique temperature profile for each device, which is used for higher level models, saving time while maintaining accuracy.<>
Keywords :
III-V semiconductors; MMIC; electronic engineering computing; finite element analysis; gallium arsenide; integrated circuit modelling; temperature distribution; thermal analysis; FEM; GaAs; MMIC thermal modeling; automated model generation program; channel temperature calculation; finite element model; temperature profile; Character generation; Electrical resistance measurement; Finite element methods; Gallium arsenide; MMICs; Maintenance; Pollution measurement; Positron emission tomography; Temperature measurement; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406174
