Title :
Modelling of passive elements for coplanar SiGe MMIC´s
Author :
Doerner, Ralf ; Gerdes, J. ; Rheinfelder, C. ; Schmuckle, F.J. ; Heinrich, Wolfgang ; Strohm, K. ; Schaffler, F. ; Luy, J.-F.
Author_Institution :
Ferdin and Braum Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
As the first step in the development of coplanar SiGe MMIC´s, modelling and experimental results on passive components are presented. The investigations demonstrate that parasitic effects induced by passivation of high-resistivity silicon substrates play an important role. Efficient CAD tools are developed and verified by comparison with measurements.<>
Keywords :
Ge-Si alloys; MMIC; coplanar waveguides; integrated circuit modelling; semiconductor materials; CAD tools; CPW; SiGe; coplanar SiGe MMIC; parasitic effects; passive element modelling; spiral inductors; Attenuation; Coplanar waveguides; Dielectric constant; Frequency; Germanium silicon alloys; MMICs; Passivation; Semiconductor device modeling; Silicon compounds; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406183
