Title :
Quadrature regenerative frequency dividers using HEMT technology
Author :
Su, Jen-Yi ; Meng, Chinchun ; Tsung, Kuan-Chang ; Huang, Guo-Wei
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Using two high electron mobility transistor (HEMT)-based technologies, divide-by-two quadrature regenerative frequency dividers (RFDs) are demonstrated. One is the 0.15-μm AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) technology with 85-GHz cutoff frequency and the other is the 0.15-μm InAlAs/InGaAs metamorphic HEMT (mHEMT) technology with 110-GHz cutoff frequency. The demonstrated 22~26-GHz pHEMT quadrature RFD consumes 28.4 mA at the supply voltage of 7 V while the 36.5~38.1-GHz mHEMT one consumes 16.9 mA at the supply voltage of 6V. Thus, the mHEMT quadrature RFD operates at high frequency and has lower power consumption as compared to the pHEMT one.
Keywords :
III-V semiconductors; aluminium compounds; frequency dividers; gallium arsenide; high electron mobility transistors; indium compounds; AlGaAs-InGaAs; InAlAs-InGaAs; current 16.9 mA; current 28.4 mA; frequency 110 GHz; frequency 22 GHz to 26 GHz; frequency 36.5 GHz to 38.1 GHz; frequency 85 GHz; high electron mobility transistor; mHEMT technology; metamorphic HEMT technology; pHEMT technology; pseudomorphic HEMT technology; quadrature RFD; quadrature regenerative frequency dividers; size 0.15 mum; voltage 6 V; voltage 7 V; Cutoff frequency; Energy consumption; Frequency conversion; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; PHEMTs; Voltage; mHEMTs; divide-by-two divider; metamorphic high electron mobility transistor (mHEMT); pseudomorphic high electron mobility transistor (pHEMT); quadrature; regenerative frequency divider (RFD);
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5525114
