DocumentCode
3235128
Title
A high-power low-loss GTO with adjustable IGT
Author
Eicher, S. ; Weber, A. ; Bauer, F. ; Zeller, H.R. ; Fichtner, W.
Author_Institution
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear
1997
fDate
26-29 May 1997
Firstpage
97
Lastpage
100
Abstract
With the concept of the transparent anode GTO (TGTO) it is possible to decouple the IGT from other performance parameters. The key features of the TGTO are a buffer layer and a low-efficiency anode. By diffusing small shorts into the anode layer it becomes possible to adjust the IGT without affecting the conduction or switching behavior. The very low losses of the non-shorted TGTO devices are fully preserved. We have fabricated and characterized such devices with different shorting schemes and present the experimental results in this paper
Keywords
losses; power semiconductor switches; semiconductor doping; short-circuit currents; thyristors; 3 kA; 4.5 kV; adjustable gate trigger current; buffer layer; conduction losses; high-power low-loss GTO; low-efficiency anode; shorting schemes; transparent anode GTO; very low losses; Anodes; Buffer layers; Cathodes; Costs; Doping profiles; Electronic switching systems; Laboratories; Switching loss; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601444
Filename
601444
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