Title :
A heterojunction bipolar transistor large-signal model for high power microwave applications
Author :
Samelis, Apostolos ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A large-signal model is presented for HBT´s. The model accounts for self-heating effects and is based on the Gummel-Poon formulation. Full model compatibility with the commercially available software package LIBRA is ensured. The model incorporates temperature dependence for most of its parameters and has been employed for the analysis of the DC and microwave power characteristics of AlGaAs-GaAs HBT´s. Good agreement between simulated and directly measured DC and microwave characteristics support the validity of the model.<>
Keywords :
equivalent circuits; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; AlGaAs-GaAs; DC power characteristics; Gummel-Poon formulation; HBT model; LIBRA software package compatibility; heterojunction bipolar transistor; high power microwave applications; large-signal model; microwave power characteristics; self-heating effects; temperature dependence; Application software; Forward contracts; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Photonic band gap; Solid state circuits; Temperature dependence; Thermal resistance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406193
