Title :
Differential electroabsorption spectra of InGaN/GaN QWs with indium surface segregation
Author :
Klymenko, Mykhailo ; Shulika, Oleksiy ; Garcia, J. Rosales
Author_Institution :
Kharkov Nat. Univ. of Radio Electron., Kharkov, Ukraine
Abstract :
In this work, we investigate the influence of the indium surface segregation on the differential absorption observed for different inverse biases applied to the structure. Obtained results evidence that the indium surface segregation leads to more sharp dependence of the absorption on the applied bias for a wide frequency range above the red edge. This feature can be used for experimental measurements of the segregation lengths applying optical spectroscopy.
Keywords :
III-V semiconductors; absorption coefficients; electroabsorption; gallium compounds; indium compounds; semiconductor quantum wells; surface segregation; wide band gap semiconductors; InGaN-GaN; absorption coefficient; differential electroabsorption spectra; indium surface segregation; inverse biases; optical spectroscopy; quantum well; Gallium nitride; Nonhomogeneous media; Optical diffraction; Optical polarization; Periodic structures; Quantum dots;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on
Conference_Location :
Kharkov
Print_ISBN :
978-1-61284-811-2
DOI :
10.1109/LFNM.2011.6144965
