Title :
Effects of channel and source/drain implants on partially-depleted SOI MOSFETs
Author :
Cao, Min ; Voorde, Paul Vande ; Diaz, Carlos ; Greene, Wayne
Author_Institution :
ULSI Res. Lab., Hewlett-Packard Co., Palo Alto, CA, USA
fDate :
30 Sep-3 Oct 1996
Abstract :
The effects of channel and source/drain implants on device characteristics of partially-depleted SOI (PD-SOI) MOSFETs were studied. Devices with a retrograde channel profile show less short-channel effect (SCE), less edge and back channel leakage currents, and more severe reverse short channel effect (RSCE) compared to devices with a uniform channel profile. When the source/drain junction is formed by a single implant instead of extensions, the ID-VDS kink effect is more pronounced. Source/drain junction formed by a phosphorus implant was demonstrated for the first time for deep submicron PD-SOI MOSFETs
Keywords :
MOSFET; characteristics measurement; doping profiles; ion implantation; leakage currents; silicon-on-insulator; Si:P; channel implants; deep submicron devices; device characteristics; kink effect; leakage currents; partially-depleted SOI MOSFETs; retrograde channel profile; short-channel effect; source/drain implants; source/drain junction; Boron; Implants; Laboratories; Leakage current; MOSFETs; Optical films; Silicon; Subthreshold current; Threshold voltage; Ultra large scale integration;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552512
