Title :
A novel extraction method for accurate determination of HBT large-signal model parameters
Author :
Der-woei Wu ; Fukuda, Motohisa ; Yong-Hoon Yun
Author_Institution :
Corp. R&D, M/A-COM Inc., Lowell, MA, USA
Abstract :
A simple large-signal model, Extended Ebers-Moll (EEM) model is successfully used to accurately describe the HBT nonlinear responses. A unique and efficient procedure that combines the DC, small-signal intrinsic, and parasitic extraction algorithms is developed to accurately determine the EEM parameters. This model shows excellent agreement with all experimental data and gives less than 1 dB discrepancy of measured 3rd-order intermodulation distortion with a wide range of input power drive.<>
Keywords :
equivalent circuits; heterojunction bipolar transistors; intermodulation distortion; semiconductor device models; Extended Ebers-Moll model; HBT large-signal model parameters; HBT nonlinear responses; IMD; extraction method; intermodulation distortion; parasitic extraction algorithm; Circuit simulation; Data mining; Distortion measurement; Drives; Electrical resistance measurement; Heterojunction bipolar transistors; Light emitting diodes; Nonlinear distortion; Research and development; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406194
