DocumentCode
3235186
Title
Influence of substrate on temperature distribution in nitride laser diodes
Author
Klymenko, Mykhailo ; Shulika, Oleksiy ; Sukhoivano, Igor
Author_Institution
Kharkov Nat. Univ. of Radio Electron., Kharkov, Ukraine
fYear
2011
fDate
5-9 Sept. 2011
Firstpage
1
Lastpage
2
Abstract
In this work, we investigate the influence of the substrate material on the temperature distribution in the active region of the nitride-based quantum well UV light-emitting diodes. Results of mathematical modeling show that the application of the GaN substrate leads to a reduction of the averaged temperature in the active region of a few tens of degrees Kelvin comparing with the sapphire substrate.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; light emitting diodes; quantum well lasers; temperature distribution; wide band gap semiconductors; AlGaN; GaN; GaN substrate; mathematical modeling; nitride laser diodes; nitride-based quantum well light-emitting diodes; sapphire substrate; substrate material; temperature distribution; Conductivity; Heating; Quantum well devices; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on
Conference_Location
Kharkov
ISSN
Pending
Print_ISBN
978-1-61284-811-2
Type
conf
DOI
10.1109/LFNM.2011.6144966
Filename
6144966
Link To Document