DocumentCode
3235196
Title
Waveform characterization of microwave power heterojunction bipolar transistors
Author
Wei, C.J. ; Lan, Yu ; Hwang, James C. M. ; Ho, W.J. ; Higgins, J.A.
Author_Institution
Lehigh Univ., Bethlehem, PA, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
1239
Abstract
Time-domain waveform characterization has been successfully applied to microwave power heterojunction bipolar transistors, for extraction and verification of their large-signal nonlinear characteristics. Compared to the conventional DC and small-signal techniques, this new technique is inherently more accurate and allows insight into the transistor operation.<>
Keywords
heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; microwave power transistors; power bipolar transistors; semiconductor device testing; heterojunction bipolar transistors; large-signal nonlinear characteristics; microwave power HBT; time-domain waveform characterization; Bipolar transistors; Capacitance; Cutoff frequency; Diodes; Heterojunction bipolar transistors; MESFETs; Microwave transistors; Probes; Space charge; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406195
Filename
406195
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