Title :
Waveform characterization of microwave power heterojunction bipolar transistors
Author :
Wei, C.J. ; Lan, Yu ; Hwang, James C. M. ; Ho, W.J. ; Higgins, J.A.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
Time-domain waveform characterization has been successfully applied to microwave power heterojunction bipolar transistors, for extraction and verification of their large-signal nonlinear characteristics. Compared to the conventional DC and small-signal techniques, this new technique is inherently more accurate and allows insight into the transistor operation.<>
Keywords :
heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; microwave power transistors; power bipolar transistors; semiconductor device testing; heterojunction bipolar transistors; large-signal nonlinear characteristics; microwave power HBT; time-domain waveform characterization; Bipolar transistors; Capacitance; Cutoff frequency; Diodes; Heterojunction bipolar transistors; MESFETs; Microwave transistors; Probes; Space charge; Time domain analysis;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406195
