A vector corrected waveform and load line measurement system for large signal transistor characterisation

Author

Leckey, J.G. ; Patterson, A.D. ; Stewart, J.A.C.

Author_Institution

High Frequency Electron. Lab., Queen´s Univ., Belfast, UK

fYear

1995

fDate

16-20 May 1995

Firstpage

1243

Abstract

A vector corrected large signal measurement setup based on a microwave transition analyser has been developed to enable device output harmonic and waveform measurement with variable drive level, frequency, DC bias and fundamental load impedance. A novel capability of this system is the ability to plot the device dynamic load lines during measurement so that nonlinear effects can be investigated as a function of bias and load impedance in real time. Load line results are shown for a MESFET and an HBT device and the effect of load impedance on device behaviour is described.<>

Keywords

Schottky gate field effect transistors; automatic test equipment; calibration; harmonics; heterojunction bipolar transistors; microwave measurement; microwave transistors; semiconductor device testing; ATE; DC bias variation; HBT device; MESFET; device output harmonic measurement; dynamic load line plotting; frequency variation; fundamental load impedance variation; large signal transistor characterisation; load line measurement system; nonlinear effects; variable drive level; vector corrected measurement; waveform measurement system; Frequency measurement; Harmonic analysis; Heterojunction bipolar transistors; Impedance measurement; MESFETs; Microwave devices; Microwave measurements; Nonlinear dynamical systems; Real time systems; Signal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406196

Filename

406196