DocumentCode
3235300
Title
Electron-wave interaction in submicrometer gate field-effect transistors
Author
Alsunaidi, M.A. ; El-Ghazaly, Samir M.
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
1257
Abstract
The electromagnetic wave effects on the behavior of submicrometer gate FETs is investigated by coupling a full wave solution of Maxwell´s equations to the active device model. Three-dimensional simulations verify the expected device-wave interaction. According to simulation results, energy transfer between electrons and the EM wave takes place along the device width. This effect is represented by a build-up in the wave amplitude and an increase in the device gain.<>
Keywords
Maxwell equations; microwave field effect transistors; semiconductor device models; Maxwell equations; active device model; device gain; electromagnetic wave effects; electron-wave interaction; field-effect transistors; full wave solution; submicron gate FET; three-dimensional simulations; wave amplitude; Charge carrier processes; Current density; Electrons; Energy exchange; FETs; Magnetic fields; Maxwell equations; Microwave devices; Partial differential equations; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406199
Filename
406199
Link To Document