Title :
Electron-wave interaction in submicrometer gate field-effect transistors
Author :
Alsunaidi, M.A. ; El-Ghazaly, Samir M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
The electromagnetic wave effects on the behavior of submicrometer gate FETs is investigated by coupling a full wave solution of Maxwell´s equations to the active device model. Three-dimensional simulations verify the expected device-wave interaction. According to simulation results, energy transfer between electrons and the EM wave takes place along the device width. This effect is represented by a build-up in the wave amplitude and an increase in the device gain.<>
Keywords :
Maxwell equations; microwave field effect transistors; semiconductor device models; Maxwell equations; active device model; device gain; electromagnetic wave effects; electron-wave interaction; field-effect transistors; full wave solution; submicron gate FET; three-dimensional simulations; wave amplitude; Charge carrier processes; Current density; Electrons; Energy exchange; FETs; Magnetic fields; Maxwell equations; Microwave devices; Partial differential equations; Time domain analysis;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406199
