DocumentCode
3235315
Title
High power GTO with high turn-off ruggedness
Author
Shimizu, Y. ; Kimura, S. ; Kozaka, H. ; Tanaka, T. ; Matsuura, N. ; Onose, H. ; Sakurada, S.
Author_Institution
Res. Lab., Hitachi Ltd., Japan
fYear
1997
fDate
26-29 May 1997
Firstpage
101
Lastpage
104
Abstract
A 6 kV, 6 kA pnpn type GTO was fabricated and its turn-off failure mechanism was investigated. Current concentration progressed remarkably in the fall period according to a simulation model. The homogenizing GTO segment on-state voltage was effective for reducing the current concentration. The maximum controllable current was increased by a factor of 1.2 by introducing a homogeneity fabrication process
Keywords
current density; equivalent circuits; failure analysis; semiconductor device models; semiconductor device reliability; thyristors; 6 kA; 6 kV; current concentration; fall period; high power GTO; high turn-off ruggedness; homogeneity fabrication process; homogenizing GTO segment on-state voltage; maximum controllable current; pnpn type GTO; simulation model; turn-off failure mechanism; Cathodes; Circuit simulation; Computational modeling; Electrodes; Equivalent circuits; Fabrication; Failure analysis; Impedance; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601445
Filename
601445
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