Modelling the processes of Relaxed Optics in the regime of saturation the excitation: Structural approach

Author

Ilcheiiko, S.N. ; Kostin, Yu.O. ; Ladugin, Maxim A. ; Lapin, P.I. ; Lobintsov, A.A. ; Marmalyuk, Aleksandr A. ; Yakubovich, S.D.

Author_Institution

SUPERLUM DIODES Ltd., Moscow, Russia

fYear

2011

fDate

5-9 Sept. 2011

Firstpage

1

Lastpage

3

Abstract

Super luminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on SQW Al_xGa_1-xAs/GaAs double heterostructure (DH) with 10 nm-thick Al_0.1Ga_0.9As active layer were studied. Depending on active channel length they exhibited CW output power of 1.0-30.0 mW ex single-mode fiber and spectral linewidth near 50 nm. Their optical gain bandwidth exceeded 40 nm. Preliminary life time tests have demonstrated high enough reliability of these devices.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical fibres; semiconductor optical amplifiers; superluminescent diodes; Al_xGa_1-xAs-GaAs; SOA; SQW double heterostructure; broadband superluminescent diodes; power 1.0 mW to 30.0 mW; semiconductor optical amplifiers; single-mode fiber; size 10 nm; wavelength 50 nm; wavelength 750 nm to 800 nm; DH-HEMTs; Optical coupling; Optical fibers; Stimulated emission; Superluminescent diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on

Conference_Location

Kharkov

ISSN

Pending

Print_ISBN

978-1-61284-811-2

Type

conf

DOI

10.1109/LFNM.2011.6144985

Filename

6144985