DocumentCode :
3235533
Title :
Modelling the processes of Relaxed Optics in the regime of saturation the excitation: Structural approach
Author :
Ilcheiiko, S.N. ; Kostin, Yu.O. ; Ladugin, Maxim A. ; Lapin, P.I. ; Lobintsov, A.A. ; Marmalyuk, Aleksandr A. ; Yakubovich, S.D.
Author_Institution :
SUPERLUM DIODES Ltd., Moscow, Russia
fYear :
2011
fDate :
5-9 Sept. 2011
Firstpage :
1
Lastpage :
3
Abstract :
Super luminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on SQW AlxGa1-xAs/GaAs double heterostructure (DH) with 10 nm-thick Al0.1Ga0.9As active layer were studied. Depending on active channel length they exhibited CW output power of 1.0-30.0 mW ex single-mode fiber and spectral linewidth near 50 nm. Their optical gain bandwidth exceeded 40 nm. Preliminary life time tests have demonstrated high enough reliability of these devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical fibres; semiconductor optical amplifiers; superluminescent diodes; AlxGa1-xAs-GaAs; SOA; SQW double heterostructure; broadband superluminescent diodes; power 1.0 mW to 30.0 mW; semiconductor optical amplifiers; single-mode fiber; size 10 nm; wavelength 50 nm; wavelength 750 nm to 800 nm; DH-HEMTs; Optical coupling; Optical fibers; Stimulated emission; Superluminescent diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on
Conference_Location :
Kharkov
ISSN :
Pending
Print_ISBN :
978-1-61284-811-2
Type :
conf
DOI :
10.1109/LFNM.2011.6144985
Filename :
6144985
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3235533
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