Title :
A/D converter using InGaAs/InAlAs resonant-tunneling diodes
Author :
Kuo, Tai-Haur ; Lin, Hung Chang ; Potter, Robert C. ; Shupe, Dave
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., MD, USA
Abstract :
A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging
Keywords :
III-V semiconductors; aluminium compounds; analogue-digital conversion; gallium arsenide; indium compounds; tunnel diodes; 4 bit; A/D converter; InGaAs-InAlAs resonant tunnelling diode; RTD; SPICE3 simulations; analogue-digital convertor; breadboard circuits; multiwell resonant-tunneling diode; semiconductors; simulation; Aerospace engineering; Circuit simulation; Diodes; Educational institutions; Frequency; Indium compounds; Indium gallium arsenide; Resistors; Resonant tunneling devices; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79843
