• DocumentCode
    3235565
  • Title

    A/D converter using InGaAs/InAlAs resonant-tunneling diodes

  • Author

    Kuo, Tai-Haur ; Lin, Hung Chang ; Potter, Robert C. ; Shupe, Dave

  • Author_Institution
    Dept. of Electr. Eng., Maryland Univ., MD, USA
  • fYear
    1989
  • fDate
    7-9 Aug 1989
  • Firstpage
    265
  • Lastpage
    273
  • Abstract
    A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging
  • Keywords
    III-V semiconductors; aluminium compounds; analogue-digital conversion; gallium arsenide; indium compounds; tunnel diodes; 4 bit; A/D converter; InGaAs-InAlAs resonant tunnelling diode; RTD; SPICE3 simulations; analogue-digital convertor; breadboard circuits; multiwell resonant-tunneling diode; semiconductors; simulation; Aerospace engineering; Circuit simulation; Diodes; Educational institutions; Frequency; Indium compounds; Indium gallium arsenide; Resistors; Resonant tunneling devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • Type

    conf

  • DOI
    10.1109/CORNEL.1989.79843
  • Filename
    79843