A novel effective switching loss estimation of non-punchthrough and punchthrough IGBTs

Author

Yamashita, J. ; Soejima, N. ; Haruguchi, H.

Author_Institution

Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

109

Lastpage

112

Abstract

IGBTs have two concepts of the structure, the punchthrough type (PT) and the non-punchthrough type (NPT). The NPT-IGBT may be fabricated at low cost compared with the PT-IGBT. For example, the NPT-IGBT may be fabricated on a floating zone wafer, but the PT-IGBT is fabricated on a wafer by epitaxial growth. However, the NPT-IGBT has higher switching loss than the PT-IGBT because of the thicker n-drift region. In this paper, switching loss of NPT-IGBTs is estimated and compared with that of a 1200 V class PT-IGBT. Also, VVVF inverter loss is calculated using experimentally obtained switching loss. Finally, thin NPT-IGBT´s switching loss is estimated and compared with that of the PT-IGBT

Keywords

insulated gate bipolar transistors; losses; power semiconductor switches; semiconductor device models; 1200 V; VVVF inverter loss; epitaxial growth; floating zone wafer; n-drift region; nonpunchthrough IGBTs; numerical device simulation; punchthrough IGBTs; switching loss estimation; Commercialization; Conductors; Costs; Epitaxial growth; Insulated gate bipolar transistors; Inverters; Power engineering and energy; Switching loss; Tail; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601447

Filename

601447