A Referenced Geometry Based Configuration Scalable Mextram Model for Bipolar Transistors

Author

Wu, Hsien-Chang ; Mijalkovic, Slobodan ; Burghartz, Joachim N.

Author_Institution

Lab. of High Frequency Technol. & Components, Delft Univ. of Technol.

fYear

2006

fDate

14-15 Sept. 2006

Firstpage

50

Lastpage

55

Abstract

A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology

Keywords

Ge-Si alloys; geometry; heterojunction bipolar transistors; integrated circuit design; power bipolar transistors; scaling circuits; system-on-chip; Mextram model; bipolar transistor model parameters; configuration scaling; geometry scaling methodology; high-speed SiGe HBT technology; Bipolar transistors; Equations; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Solid modeling; System-on-a-chip; Temperature; Thermal resistance; Geometry scaling; Mextram model; Multi-emitter SiGe HBT; collector resistance; thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Behavioral Modeling and Simulation Workshop, Proceedings of the 2006 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9742-8

Type

conf

DOI

10.1109/BMAS.2006.283469

Filename

4062051