Title :
Recrystallized parylene as a mask for silicon chemical etching
Author :
Lo, Hsi-wen ; Kuo, Wen-Cheng ; Yang, Yao-Joe ; Tai, Yu-Chong
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA
Abstract :
This paper presents the first use of recrystallized parylene as masking material for silicon chemical etch. Recrystallized parylene was obtained by melting parylene C at 350degC for 2 hours. The masking ability of recrystallized parylene was tested in HNA (hydrofluoric acid, nitric acid and acetic acid) solution of various ratios, KOH (potassium hydroxide) solution and TMAH (tetramethylammonium hydroxide) at different temperatures and concentrations. It is found that interface between parylene and the substrate can be attacked, which results in undercuts. Otherwise, recrystallized parylene exhibited good adhesion to silicon, complete protection of unexposed silicon and silicon etching rates comparable to literature data.
Keywords :
adhesion; elemental semiconductors; etching; masks; recrystallisation; silicon; Si; acetic acid); adhesion; hydrofluoric acid; masking material; melting parylene; nitric acid; potassium hydroxide; recrystallized parylene; silicon chemical etching; silicon etching rates; temperature 350 degC; tetramethylammonium hydroxide; time 2 hour; Adhesives; Chemical technology; Glass; Micromechanical devices; Nitrogen; Plasma applications; Plasma temperature; Sensor arrays; Silicon; Wet etching; parylene; recrystallization; silicon wet etching;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
DOI :
10.1109/NEMS.2008.4484464
