A simple and effective carrier lifetime evaluation method with diode test structures in IGBT

Author

Aono, Shinji ; Takahashi, Tetsuo ; Nakamura, Katsumi ; Nakamura, Hideki ; Uenishi, Akio ; Harada, Masana

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

117

Lastpage

120

Abstract

A simple and effective method of evaluating the carrier lifetime of a power device chip is proposed. In this method, Test Element Groups (TEGs) of diodes fabricated in the periphery of an Insulated Gate Bipolar Transistor (IGBT) chip were used as carrier lifetime monitors of the IGBT´s n^- layer. The measured forward voltage drops (V _f) of the diode-TEGs were compared with simulated V_f and the lifetime was determined from the lifetime parameter of simulations. The estimated lifetime value was verified by the reverse recovery current characteristic

Keywords

carrier lifetime; electric variables measurement; insulated gate bipolar transistors; semiconductor device testing; IGBT; carrier lifetime evaluation; diode test structures; forward voltage drops; n^- layer; power device chip; reverse recovery current characteristic; simulations; test element groups; Area measurement; Cathodes; Charge carrier lifetime; Current measurement; Diodes; Insulated gate bipolar transistors; Life estimation; Life testing; Lifetime estimation; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601449

Filename

601449